Ads related to diamond gsv3000 30 amp power
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TA75S558F(TE85L, F) Toshiba, O...TA75S558F(TE85L, F) Toshiba, Op Amp, 5-Pin SSOP, Mounting Type: Surface Mount,... TA75S558F(TE85L, F) Toshiba, Op Amp, 5-Pin SSOP, Mounting Type: Surface Mount, Power Supply Type: Dual, Number of Channels per Chip: 1, Typical Dual Supply Voltage: ±12 V, ±15 V, ±5 V, ±9 V, Typical Slew Rate: 1V/µs, Maximum Operating Temperature: +85... moreDetails
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N-Channel MOSFET, 30 A, 60 V, ...N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1, S4X(S, Mounti... N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1, S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 25 W, Transistor... moreDetails
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P-Channel MOSFET, 2 A, 30 V, 3...P-Channel MOSFET, 2 A, 30 V, 3-Pin UFM Toshiba SSM3J117TU(TE85L), Mounting Typ... P-Channel MOSFET, 2 A, 30 V, 3-Pin UFM Toshiba SSM3J117TU(TE85L), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 225 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.6V, Maximum Power Dissipation: 800 mW, Transistor... moreDetails
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N-Channel MOSFET, 30 A, 60 V, ...N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1, S4X(S, Mounti... N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1, S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 25 W, Transistor... moreDetails
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N-Channel MOSFET, 2.2 A, 30 V,...N-Channel MOSFET, 2.2 A, 30 V, 3-Pin UFM Toshiba SSM3K116TU(TE85L), Mounting T... N-Channel MOSFET, 2.2 A, 30 V, 3-Pin UFM Toshiba SSM3K116TU(TE85L), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 135 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 800 mW, Transistor... moreDetails
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N-Channel MOSFET, 1 A, 30 V, 3...N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 Toshiba 2SK3074(TE12L, F), Mounting T... N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 Toshiba 2SK3074(TE12L, F), Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 3 W, Transistor Configuration: Single, Maximum Gate Source... moreDetails
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P-Channel MOSFET, 10 A, 30 V, ...P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP Toshiba TPC8125, Mounting Type: Surfac... P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP Toshiba TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration:... moreDetails
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Toshiba GT30J121 IGBT, 30 A 60...Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emi... Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 4.8 x 20mm, Maximum Operating Temperature:... moreDetails
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N-Channel MOSFET, 30.8 A, 600 ...N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5, Mounting Type: S... N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power... moreDetails
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P-Channel MOSFET, 10 A, 30 V, ...P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP Toshiba TPC8125, Mounting Type: Surfac... P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP Toshiba TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration:... moreDetails
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P-Channel MOSFET, 10 A, 30 V, ...P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP Toshiba TPC8125, Mounting Type: Surfac... P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP Toshiba TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration:... moreDetails
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N-Channel MOSFET, 6 A, 30 V, 3...N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K335R, Mounting Type: Su... N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K335R, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power... moreDetails
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N-Channel MOSFET, 57 A, 30 V, ...N-Channel MOSFET, 57 A, 30 V, 8-Pin SOP Toshiba TPH6R003NL, Mounting Type: Sur... N-Channel MOSFET, 57 A, 30 V, 8-Pin SOP Toshiba TPH6R003NL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power... moreDetails
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Toshiba GT30J121 IGBT, 30 A 60...Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emi... Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 170 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 4.8mm, Height: 20mm, Dimensions: 15.9 x... moreDetails
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N-Channel MOSFET, 200 mA, 30 V...N-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 Toshiba 2SK2009(F), Mounting Typ... N-Channel MOSFET, 200 mA, 30 V, 3-Pin SOT-346 Toshiba 2SK2009(F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 200 mW, Transistor... moreDetails
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N-Channel MOSFET, 1 A, 30 V, 3...N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 Toshiba 2SK3074(TE12L, F), Package Ty... N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 Toshiba 2SK3074(TE12L, F), Package Type: PW Mini, Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 3 W, Transistor Configuration: Single,... moreDetails
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N-Channel MOSFET, 30.8 A, 600 ...N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5, Mounting Type: S... N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power... moreDetails
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N-Channel MOSFET, 1 A, 30 V, 3...N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 Toshiba 2SK3074(TE12L, F), Mounting T... N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 Toshiba 2SK3074(TE12L, F), Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 3 W, Transistor Configuration: Single, Maximum Gate Source... moreDetails
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P-Channel MOSFET, 18 A, 30 V, ...P-Channel MOSFET, 18 A, 30 V, 8-Pin Toshiba TPC8117(TE12L, Q), Mounting Type: ... P-Channel MOSFET, 18 A, 30 V, 8-Pin Toshiba TPC8117(TE12L, Q), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor... moreDetails
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N-Channel MOSFET, 30.8 A, 600 ...N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5, Mounting Type: S... N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 109 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power... moreDetails
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